Title :
Single contact monolithically integrated DFB laser amplifier
Author :
Sahara, R.T. ; Salvatore, R.A. ; Lu, H.
Author_Institution :
Corning Lasertron, Bedford, MA, USA
fDate :
7/1/2002 12:00:00 AM
Abstract :
A monolithic 1550-nm single-mode AlInGaAs-InP multiple quantum-well distributed feedback laser and amplifier is presented. For the 400-μm-long grating section /spl kappa/=112+ 30i cm/sup -1/, while the output is taken from the 200-μm-long amplifier section. The slope efficiency of the chip was 0.21 W/A, while the kink free power from the fiber was 34 mW. Narrow linewidths of <50 kHz were measured, and the dispersion penalty remained less than 2.0 dB for a data rate of 2.5 Gb/s over 300 km of SMF-28.
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; diffraction gratings; distributed feedback lasers; gallium arsenide; indium compounds; integrated optics; laser beams; laser feedback; laser modes; laser variables measurement; optical fabrication; optical fibre communication; optical transmitters; quantum well lasers; 1550 nm; 2.5 Gbit/s; 200 micron; 300 km; 34 mW; 400 micron; 50 kHz; AlInGaAs-InP; AlInGaAs-InP distributed feedback laser; SMF-28; amplifier section; chip; data rate; dispersion penalty; distributed feedback amplifier; fiber; grating section; kink free power; laser output; monolithic single-mode distributed feedback laser; narrow linewidths; single contact monolithically integrated DFB laser amplifier; single-mode multiple quantum-well distributed feedback laser; slope efficiency; Contacts; Diode lasers; Distributed feedback devices; Fiber lasers; Gratings; Laser feedback; Optical amplifiers; Optical fiber devices; Passive optical networks; Semiconductor optical amplifiers;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2002.1012378
