Low-noise pseudomorphic dual-gate cascode HEMTs with extremely high gain

Author

Wenger, J. ; Narozny, P. ; Dämbkes, H. ; Splettstösser, J. ; Werres, And C.

Author_Institution

Daimler-Benz AG, Res. Center, Ulm, Germany

Volume

2

Issue

2

fYear

1992

Firstpage

46

Lastpage

48

Abstract

Quarter-micron InGaAs-GaAs dual-gate HEMTs connected as a cascode MMIC in a compact manner have been fabricated and investigated. The devices show a high output impedance and a very low feedback capacitance, resulting in a high-voltage gain factor /sub gm///sub gd/ of 125 and a C/sub gs//C/sub gd/ ratio of 45. The current gain cutoff frequency f/sub T/ is 45 GHz and the maximum stable gain is 23.5 dB at 10 GHz and 19 dB at 20 GHz. The pseudomorphic cascode HEMTs show a low-noise figure of 1.1 dB with an associated gain of 22 dB at 10 GHz, at 18 GHz the minimum noise figure is 1.9 dB with 16-dB gain.<>

Keywords

III-V semiconductors; MMIC; gallium arsenide; high electron mobility transistors; indium compounds; solid-state microwave devices; 0.25 micron; 1.1 to 1.9 dB; 10 to 45 GHz; 16 to 23.5 dB; InGaAs-GaAs; SHF; cascode MMIC; current gain cutoff frequency; dual-gate HEMTs; high-voltage gain factor; low feedback capacitance; low noise devices; maximum stable gain; minimum noise figure; pseudomorphic cascode HEMTs; quarter micron devices; Capacitance; Cutoff frequency; Gain; Gallium arsenide; HEMTs; Impedance; MIM capacitors; MODFETs; Microwave amplifiers; Microwave devices;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.122405

Filename

122405