A 0.5-watt 47-GHz power amplifier using GaAs monolithic circuits

Author

Hegazi, G. ; Pande, K. ; Phelleps, F. ; Chang, E. ; Cornfeld, A. ; Rice, P. ; Ghahremani, M. ; Pages, P.

Author_Institution

COMSAT Lab., Clarksburg, MD, USA

Volume

2

Issue

2

fYear

1992

Firstpage

61

Lastpage

62

Abstract

47-GHz monolithic microwave integrated circuit (MMIC) power amplifier chips have been developed using 0.35-mm gate-length molecular beam epitaxial (MBE) MESFET technology. The amplifier chips have been assembled with nominal output power of 0.4 W and 15 dB of gain. The saturated output power of this amplifier exceeded 0.5 W. This amplifier has an application as a driver for a monolithic doubler circuit to reliably produce greater than 80 mW of output power at 94 GHz for missile seeker applications.<>

Keywords

III-V semiconductors; MMIC; Schottky gate field effect transistors; field effect integrated circuits; gallium arsenide; microwave amplifiers; power amplifiers; 0.35 micron; 0.4 to 0.5 W; 15 dB; 47 GHz; 80 mW; 94 GHz; EHF; GaAs; MBE; MESFET technology; MM-wave type; amplifier chips; driver; missile seeker applications; molecular beam epitaxial; monolithic doubler circuit; monolithic microwave integrated circuit; power amplifier; Gallium arsenide; Integrated circuit technology; MESFET integrated circuits; MMICs; Microwave amplifiers; Microwave integrated circuits; Molecular beam epitaxial growth; Monolithic integrated circuits; Power amplifiers; Power generation;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.122410

Filename

122410