DocumentCode :
769990
Title :
2-D mesh adaption and flux discretizations for dopant diffusion modeling
Author :
Lin, Chih-Chuan ; Law, Mark E.
Author_Institution :
Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA
Volume :
15
Issue :
2
fYear :
1996
fDate :
2/1/1996 12:00:00 AM
Firstpage :
194
Lastpage :
207
Abstract :
Mesh generation and adaption for solving dopant diffusion in process simulation is a difficult task, complicated by both the moving boundaries of oxide growth and the time dependence of the solutions. For both computational and ease of use reasons, automatic mesh generation and discretization error control is desirable. This paper describes an approach based on local error estimates to refine the mesh. The results presented in this paper extend our previous work to two-dimensional problems. The implementation of this approach is done in a process simulator, the Florida Object-Oriented Process Simulator. Several test cases are described to demonstrate the effectiveness of the algorithms
Keywords :
VLSI; diffusion; digital simulation; integrated circuit modelling; mesh generation; semiconductor doping; semiconductor process modelling; 2D mesh adaption; Florida Object-Oriented Process Simulator; VLSI technology; discretization error control; dopant diffusion modeling; flux discretizations; local error estimates; numerical simulation; process simulation; Computational modeling; Error correction; Helium; Mesh generation; Object oriented modeling; Semiconductor devices; Semiconductor process modeling; Testing; Two dimensional displays; Very large scale integration;
fLanguage :
English
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
Publisher :
ieee
ISSN :
0278-0070
Type :
jour
DOI :
10.1109/43.486665
Filename :
486665
Link To Document :
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