• DocumentCode
    769990
  • Title

    2-D mesh adaption and flux discretizations for dopant diffusion modeling

  • Author

    Lin, Chih-Chuan ; Law, Mark E.

  • Author_Institution
    Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA
  • Volume
    15
  • Issue
    2
  • fYear
    1996
  • fDate
    2/1/1996 12:00:00 AM
  • Firstpage
    194
  • Lastpage
    207
  • Abstract
    Mesh generation and adaption for solving dopant diffusion in process simulation is a difficult task, complicated by both the moving boundaries of oxide growth and the time dependence of the solutions. For both computational and ease of use reasons, automatic mesh generation and discretization error control is desirable. This paper describes an approach based on local error estimates to refine the mesh. The results presented in this paper extend our previous work to two-dimensional problems. The implementation of this approach is done in a process simulator, the Florida Object-Oriented Process Simulator. Several test cases are described to demonstrate the effectiveness of the algorithms
  • Keywords
    VLSI; diffusion; digital simulation; integrated circuit modelling; mesh generation; semiconductor doping; semiconductor process modelling; 2D mesh adaption; Florida Object-Oriented Process Simulator; VLSI technology; discretization error control; dopant diffusion modeling; flux discretizations; local error estimates; numerical simulation; process simulation; Computational modeling; Error correction; Helium; Mesh generation; Object oriented modeling; Semiconductor devices; Semiconductor process modeling; Testing; Two dimensional displays; Very large scale integration;
  • fLanguage
    English
  • Journal_Title
    Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0278-0070
  • Type

    jour

  • DOI
    10.1109/43.486665
  • Filename
    486665