• DocumentCode
    77004
  • Title

    Black Phosphorus p-MOSFETs With 7-nm HfO2 Gate Dielectric and Low Contact Resistance

  • Author

    Haratipour, Nazila ; Robbins, Matthew C. ; Koester, Steven J.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Minnesota, Minneapolis, MN, USA
  • Volume
    36
  • Issue
    4
  • fYear
    2015
  • fDate
    Apr-15
  • Firstpage
    411
  • Lastpage
    413
  • Abstract
    We report record contact resistance and transconductance in locally back-gated black phosphorus p-MOSFETs with 7-nm thick HfO2 gate dielectrics. Devices with effective gate lengths, Leff, from 0.55 to 0.17 μm were characterized and shown to have contact resistance values as low as 1.14 ± 0.05 Q-mm. In addition, devices with Leff = 0.17 μm displayed extrinsic transconductance exceeding 250 μS/μm and ON-state current approaching 300 μA/μm.
  • Keywords
    MOSFET; contact resistance; dielectric devices; dielectric materials; hafnium compounds; phosphorus; HfO2-P; back-gated black phosphorus p-MOSFET; gate dielectric material; low contact resistance; size 0.55 mum to 0.17 mum; size 7 nm; Contact resistance; Dielectrics; Field effect transistors; Hafnium compounds; Logic gates; Materials; Transconductance; MOSFET; Two-dimensional materials; black phosphorus; contact resistance; high-K gate dielectrics;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2015.2407195
  • Filename
    7047682
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=77004