DocumentCode :
770355
Title :
An advanced PWM-switch model including semiconductor device nonlinearities
Author :
Ammous, Anis ; Ammous, Kaiçar ; Ayedi, Moez ; Ounajjar, Youssef ; Sellami, Fayçal
Author_Institution :
Lab. d´´Electronique et des Technol. de l´´Inf., Power Electron. Group, Sfax, Tunisia
Volume :
18
Issue :
5
fYear :
2003
Firstpage :
1230
Lastpage :
1237
Abstract :
Contrary to the classical ideal averaged models, the introduced averaged model includes the nonlinear effects of the power semiconductor devices. The proposed nonideal pulse width modulated (PWM)-switch model is a useful method for modeling pulse width modulated converters operating in the continuous conduction mode. The main advantages of the proposed averaged model are that it takes into account the nonlinear effects of power devices and make it possible to estimate the dissipated power in the different circuit devices. The proposed model can be applied to bi-directional converters and allows the electrothermal simulations of the power electronic system. A simple technique to evaluate the different static and dynamic parameters of the devices, from manufacturers data sheets or experimentally, is presented.
Keywords :
DC-AC power convertors; PWM power convertors; insulated gate bipolar transistors; power semiconductor devices; power semiconductor switches; semiconductor device models; switching convertors; DC-AC converter; IGBT; PWM-switch model; bi-directional converters; dissipated power estimation; electrothermal simulations; ideal averaged models; nonideal pulse width modulated switch model; nonlinear effects; power electronic system; power semiconductor devices; semiconductor device nonlinearities; Bidirectional control; Circuit simulation; Electrothermal effects; Nonlinear dynamical systems; Power electronics; Power semiconductor devices; Power system modeling; Pulse width modulation; Pulse width modulation converters; Semiconductor devices;
fLanguage :
English
Journal_Title :
Power Electronics, IEEE Transactions on
Publisher :
ieee
ISSN :
0885-8993
Type :
jour
DOI :
10.1109/TPEL.2003.816195
Filename :
1224480
Link To Document :
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