DocumentCode :
770366
Title :
The Impact of Deep Ni Salicidation and 
Plasma Treatment on Nano-SOI FinFETs
Plasma Treatment on Nano-SOI FinFETsAuthor :
You, Hsin-Chiang ; Kuo, Po-Yi ; Ko, Fu-Hsiang ; Chao, Tien-Sheng ; Lei, Tan-Fu
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu
Volume :
27
Issue :
10
fYear :
2006
Firstpage :
799
Lastpage :
801
Abstract :
In this letter, 50-nm gate-length nano-silicon-on-insulator FinFETs with deep Ni salicidation and NH3 plasma treatment are fabricated. It is found that device performances, including subthreshold slope (SS) drain-induced barrier lowering (DIBL) and off-state leakage current, can be greatly improved by using deep Ni salicidation process compared to no Ni salicidation process. The deep Ni-salicided devices effectively suppress the floating-body effect and parasitic bipolar junction transistor action. In addition, the effect of NH3 plasma on the deep Ni-salicided devices is discussed. Experimental results reveal that the devices under a new state-of-the-art NH3 plasma process can achieve better performance such as an SS of 66 mV/dec and a DIBL of 0.03 V
Keywords :
MOSFET; nanoelectronics; nickel; nitrogen compounds; plasma materials processing; silicon-on-insulator; 50 nm; FinFET; NH3; Ni; deep salicidation; drain-induced barrier lowering; floating-body effect; plasma treatment; silicon-on-insulator; subthreshold slope; Chaos; FinFETs; MOSFETs; Plasma applications; Plasma devices; Plasma properties; Plasma sources; Scanning electron microscopy; Thin film devices; Thin film transistors; Deep Ni salicidation; drain-induced barrier lowering (DIBL); floating-body effect; subthreshold slope (SS);
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2006.882519
Filename :
1704904
Link To Document :
