• DocumentCode
    770389
  • Title

    Quantum mechanical effects on noise properties of nanoelectronic devices: application to Monte Carlo simulation

  • Author

    Oriols, Xavier

  • Author_Institution
    Dept. d´´Enginyeria Electron., Univ. Autonoma de Barcelona, Spain
  • Volume
    50
  • Issue
    9
  • fYear
    2003
  • Firstpage
    1830
  • Lastpage
    1836
  • Abstract
    A discussion about the quantum mechanical effects on noise properties of ballistic (phase-coherent) nanoscale devices is presented. It is shown that quantum noise can be understood in terms of quantum trajectories. This interpretation provides a simple and intuitive explanation of the origin of quantum noise that can be very salutary for nanoelectronic engineers. In particular, an injection model is presented that, coupled with a standard Monte Carlo algorithm, provides an accurate modeling of quantum noise. As a test, the standard results of noise in tunneling junction devices are reproduced within this approach.
  • Keywords
    Monte Carlo methods; ballistic transport; nanoelectronics; quantum noise; semiconductor device models; semiconductor device noise; thermal noise; Monte Carlo simulation; ballistic nanoscale devices; injection model; noise properties; phase-coherent nanoscale devices; quantum mechanical effects; quantum noise; Active noise reduction; Coherence; Electrons; Integrated circuit technology; Mechanical factors; Monte Carlo methods; Nanoscale devices; Phase noise; Quantum mechanics; Semiconductor device noise;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2003.815369
  • Filename
    1224484