DocumentCode :
770389
Title :
Quantum mechanical effects on noise properties of nanoelectronic devices: application to Monte Carlo simulation
Author :
Oriols, Xavier
Author_Institution :
Dept. d´´Enginyeria Electron., Univ. Autonoma de Barcelona, Spain
Volume :
50
Issue :
9
fYear :
2003
Firstpage :
1830
Lastpage :
1836
Abstract :
A discussion about the quantum mechanical effects on noise properties of ballistic (phase-coherent) nanoscale devices is presented. It is shown that quantum noise can be understood in terms of quantum trajectories. This interpretation provides a simple and intuitive explanation of the origin of quantum noise that can be very salutary for nanoelectronic engineers. In particular, an injection model is presented that, coupled with a standard Monte Carlo algorithm, provides an accurate modeling of quantum noise. As a test, the standard results of noise in tunneling junction devices are reproduced within this approach.
Keywords :
Monte Carlo methods; ballistic transport; nanoelectronics; quantum noise; semiconductor device models; semiconductor device noise; thermal noise; Monte Carlo simulation; ballistic nanoscale devices; injection model; noise properties; phase-coherent nanoscale devices; quantum mechanical effects; quantum noise; Active noise reduction; Coherence; Electrons; Integrated circuit technology; Mechanical factors; Monte Carlo methods; Nanoscale devices; Phase noise; Quantum mechanics; Semiconductor device noise;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2003.815369
Filename :
1224484
Link To Document :
بازگشت