DocumentCode
770397
Title
Magnetic Anisotropy of Ion-Implanted (100), (110) Garnet Films
Author
Okada, O. ; Honda, H.
Author_Institution
NEC Corp.
Volume
2
Issue
7
fYear
1987
fDate
7/1/1987 12:00:00 AM
Firstpage
619
Lastpage
625
Abstract
Anisotropy changes caused by He+ and H2 + implantations in (100), (110), and (111) magnetic garnet films have been studied. In (100) films, in striking contrast to (111) films, uniaxial anisotropy field changes were almost the same for He+ and H2 + implantations. In (110) films, the orthorhombic anisotropy parameter B changed greatly with H2 + implantations, consistent with anisotropy changes in (111) films. The change in parameter A for He+-implanted (110) films was of the same order as for H2 + implantations. Magnetocrystalline anisotropy K1 in H2 + implanted films was determined from the angular dependence of (100) in-plane resonance fields. The sign of K1 changed to positive with H2 + implantation. It was found that H2 + implantations have a great effect on ¿111 and K1 , but have little influence on ¿100 .
Keywords
Anisotropic magnetoresistance; Garnet films; Helium; Hydrogen; Magnetic anisotropy; Magnetic films; Magnetic resonance; Magnetostriction; Perpendicular magnetic anisotropy; Plasma temperature;
fLanguage
English
Journal_Title
Magnetics in Japan, IEEE Translation Journal on
Publisher
ieee
ISSN
0882-4959
Type
jour
DOI
10.1109/TJMJ.1987.4549555
Filename
4549555
Link To Document