DocumentCode
770433
Title
An Assessment of the Location of As-Grown Electron Traps in 
/HfSiO Stacks
Author
Zhang, J.F. ; Zhao, C.Z. ; Zahid, M.B. ; Groeseneken, G. ; Degraeve, R. ; De Gendt, S.
Author_Institution
Sch. of Eng., Liverpool John Moores Univ.
Volume
27
Issue
10
fYear
2006
Firstpage
817
Lastpage
820
Abstract
Replacing SiON by high-kappa layers is a pressing issue for CMOS technologies. The presence of as-grown electron traps in HfO2 is a major obstacle, since they can induce threshold-voltage instability, reduce electron mobility, and result in early breakdown. Their location has not been clarified and is addressed in this letter. By selecting test conditions carefully and using samples with a progressive reduction of HfO2 thickness, the authors are able to rule out that traps are piled up near the HfO2/HfSiO interface. A uniform distribution throughout HfO2 does not agree with the test data, either. Results support that trapping is negligible near to one or both ends of the HfO2 layer when compared with trapping in the central region
Keywords
CMOS integrated circuits; electric breakdown; electron mobility; electron traps; hafnium compounds; silicon compounds; CMOS technologies; HfO2-HfSiO; dielectric breakdown; electron mobility; electron traps; gate dielectrics; threshold-voltage instability; CMOS technology; Dielectrics; Educational institutions; Electron traps; Hafnium oxide; Leakage current; Microelectronics; Pressing; Pulse measurements; Testing; Defects; gate dielectrics; high-; instability; oxides; reliability; traps;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2006.882566
Filename
1704910
Link To Document