Metal-induced grown Si nanostructures for large-area-device applications

Author

Ji, Chunhai ; Anderson, Wayne A.

Author_Institution

Dept. of Electr. Eng., State Univ. of New York, Amherst, NY, USA

Volume

50

Issue

9

fYear

2003

Firstpage

1885

Lastpage

1889

Abstract

Hydrogenated nanocrystalline silicon (nc-Si:H) films were formed by using a metal (Ni and Co) induced growth (MIG) method, in which nc-Si films epitaxially grow via the formation of a metal disilicide due to an extremely small lattice mismatch. This method avoids high-temperature processing and can be scaled up for large areas. We report on the present state of the fabrication and properties of MIG ne-Si. The effects of processing parameters and different metal prelayers on the Si nanostructures and electrical properties are discussed. The current-voltage-temperature measurement for an Al Schottky diode on MIG nc-Si reveals thermionic field emission to be the dominant carrier transport mechanism in the high-voltage forward current-voltage (I-V) region. The potential applications of these films include large-area solar cells or flat panel displays.

Keywords

Schottky diodes; cobalt; elemental semiconductors; epitaxial growth; field emission; flat panel displays; large screen displays; nanoelectronics; nanostructured materials; nickel; semiconductor epitaxial layers; semiconductor growth; silicon; solar cells; thermionic emission; Al; Al Schottky diode; Co; Co induced growth; HV forward current-voltage region; Ni; Ni induced growth; Si:H; Si:H films; carrier transport mechanism; current-voltage-temperature measurement; electrical properties; epitaxial growth; fabrication; flat panel displays; high-voltage forward I-V region; hydrogenated nanocrystalline Si films; large-area FPDs; large-area solar cells; large-area-device applications; metal disilicide; metal prelayers; metal-induced grown Si nanostructures; processing parameters; thermionic field emission; Current measurement; Fabrication; Flat panel displays; Lattices; Nanostructures; Photovoltaic cells; Schottky diodes; Semiconductor films; Silicon; Thermionic emission;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2003.815861

Filename

1224489