Title :
Tunable Photodetector Based on GaAs/InP Wafer Bonding
Author :
Wang, Wenjuan ; Ren, Xiaomin ; Huang, Hui ; Wang, Xingyan ; Cui, Hailin ; Miao, Ang ; Li, Yiqun ; Huang, Yongqing
Author_Institution :
Key Lab. of Opt. Commun. & Lightwave Technol., Beijing Univ. of Posts & Telecommun.
Abstract :
We demonstrate a tunable long wavelength vertical-cavity photodetector which is fabricated by bonding a GaAs-based tunable filter with an InP-based absorption structure. The wavelength tuning range of 10.5 nm was achieved via thermal-optic effect. The external quantum efficiency of about 22%, the spectral linewidth as narrow as 0.6 nm, and the 3-dB bandwidth of 12 GHz were obtained in the device
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; photodetectors; wafer bonding; 10.5 nm; 12 GHz; GaAs-InP; thermal-optic effect; tunable filter; tunable photodetector; vertical-cavity photodetector; wafer bonding; Absorption; Bandwidth; Etching; Gallium arsenide; Indium phosphide; Optical fiber communication; Optical filters; Photodetectors; Wafer bonding; Wavelength division multiplexing; Photodetector; tunable; wafer bonding;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2006.883053
