Title :
Lateral ion implant straggle and mask proximity effect
Author :
Hook, Terence B. ; Brown, J. ; Cottrell, Peter ; Adler, Eric ; Hoyniak, Dennis ; Johnson, Jim ; Mann, Randy
Author_Institution :
Semicond. R&D Center, IBM Microelectron., Essex Junction, VT, USA
Abstract :
Lateral scattering of retrograde well implants is shown to have an effect on the threshold voltage of nearby devices. The threshold voltage of both NMOSFETs and PMOSFETs increases in magnitude for conventional retrograde wells, but for triple-well isolated NMOSFETs the threshold voltage decreases for narrow devices near the edge of the well. Electrical data, SIMS, and SUPREM4 simulations are shown that elucidate the phenomenon.
Keywords :
MOSFET; ion implantation; isolation technology; masks; proximity effect (lithography); secondary ion mass spectra; NMOSFET; PMOSFET; SIMS; SUPREM4 simulation; electrical characteristics; lateral ion implant straggle; lateral scattering; mask proximity effect; retrograde well; threshold voltage; triple-well isolation; Boron; CMOS technology; Implants; MOSFETs; Proximity effect; Resists; Scattering; Semiconductor device doping; Silicon; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2003.815371
