• DocumentCode
    770551
  • Title

    A Novel Bias Temperature Instability Characterization Methodology for High- k nMOSFETs

  • Author

    Heh, Dawei ; Choi, Rino ; Young, Chadwin D. ; Lee, Byoung Hun ; Bersuker, Gennadi

  • Author_Institution
    SEMATECH, Austin, TX
  • Volume
    27
  • Issue
    10
  • fYear
    2006
  • Firstpage
    849
  • Lastpage
    851
  • Abstract
    The power law dependence of the threshold voltage shift (DeltaV th) on stress time for high-k nMOSFETs is studied using a single-pulse Id-Vg technique. The power law exponent value is found to be strongly affected by fast transient charge detrapping during the stress interruption time, which may result in an inaccurate lifetime prediction. A new analysis method that eliminates the impact of the stress interruption time is proposed to evaluate bias temperature instability in n-type high-k devices
  • Keywords
    MOSFET; dielectric materials; semiconductor device models; bias temperature instability; fast transient charge detrapping; high-k nMOSFET; lifetime prediction; stress interruption time; threshold voltage shift; Charge measurement; Current measurement; High K dielectric materials; High-K gate dielectrics; MOSFETs; Monitoring; Pulse measurements; Stress measurement; Temperature; Time measurement; Lifetime prediction; relaxation; single pulse; transient charge;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2006.882525
  • Filename
    1704920
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=770551