DocumentCode :
770581
Title :
Cost-Effective Integrated RF Power Transistor in 0.18- 
CMOS Technology
CMOS TechnologyAuthor :
Yan, Tao ; Liao, Huailin ; Xiong, Yong Zhong ; Zeng, Rong ; Shi, Jinglin ; Huang, Ru
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing
Volume :
27
Issue :
10
fYear :
2006
Firstpage :
856
Lastpage :
858
Abstract :
A novel MOS power transistor with high breakdown voltage is proposed and manufactured in a standard 0.18-mum CMOS process without any additional masks or extra process steps. A "U"-type n- drift region formed with shallow trench isolation (STI) layer and n-well is adopted to improve the breakdown voltage. A MOS transistor with 11.6-V breakdown voltage, 18-GHz cutoff frequency, and 30-GHz maximum oscillation frequency has been demonstrated. In addition, it has 11.5-dB power gain, 19.3-dBm output power at 2.45 GHz with power-added efficiency (PAE) of 55%, and 8.3-dB power gain 18.7-dBm output power at 5.8 GHz with PAE of 38%. The presented RF power transistor is cost effective and can be conveniently applied in the power amplifier integration for RF SoC
Keywords :
CMOS integrated circuits; field effect MMIC; microwave power transistors; power MOSFET; semiconductor device breakdown; 0.18 micron; 11.5 dB; 11.6 V; 18 GHz; 2.45 GHz; 30 GHz; 5.8 GHz; 8.3 dB; CMOS technology; MOS power transistor; breakdown voltage; integrated RF power transistor; shallow trench isolation; CMOS process; CMOS technology; Cutoff frequency; Isolation technology; MOSFETs; Manufacturing processes; Power amplifiers; Power generation; Power transistors; Radio frequency; CMOS compatible; RF; power amplifier (PA); power transistor; system-on-chip (SoC);
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2006.882568
Filename :
1704922
Link To Document :
