A GaAs-based field-modulating plate HFET with improved WCDMA peak-output-power characteristics

Author

Wakejima, Akio ; Ota, Kazuki ; Matsunaga, Kohji ; Kuzuhara, Masaaki

Author_Institution

Photonic & Wireless Devices Res. Labs., NEC Corp., Shiga, Japan

Volume

50

Issue

9

fYear

2003

Firstpage

1983

Lastpage

1987

Abstract

A novel GaAs power FET with a field-modulating plate (FP-FET) and operated at a drain bias voltage of 24 V was developed. Regarding the power performance of an FP-FET under wideband code division multiple access (WCDMA) operation, its peak output power significantly degraded in the saturated-output-power region when its FP length was short. However, by introducing a sufficiently large FP length, it was demonstrated that the peak-power degradation can be significantly suppressed. In particular, an FP-FET amplifier fabricated with an FP length of 1.5 μm exhibited no WCDMA peak-power degradation and delivered an output power of 120 W with a linear gain of 14.2 dB at 2.14 GHz.

Keywords

III-V semiconductors; UHF field effect transistors; UHF power amplifiers; code division multiple access; gallium arsenide; 1.5 micron; 120 W; 14.2 dB; 2.14 GHz; 24 V; FP-FET; GaAs; WCDMA peak-output-power characteristics; drain bias voltage; field-modulating plate HFET; linear gain; saturated-output power region; Degradation; FETs; Gallium arsenide; HEMTs; MODFETs; Multiaccess communication; Power amplifiers; Power generation; Voltage; Wideband;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2003.815577

Filename

1224502