Title :
An RF model of the accumulation-mode MOS varactor valid in both accumulation and depletion regions
Author :
Song, Seong-Sik ; Shin, Hyungcheol
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea
Abstract :
This work presents an RF model of an accumulation-mode MOS varactor with physical lumped elements derived from the device structure. The channel resistance was modeled by three resistance components to cover both accumulation and depletion regions with single equivalent circuit. With parameter values obtained by direct extraction, this model could accurately describe characteristics of the device without any optimization steps in the frequency range up to 18 GHz, as well as over a wide bias range. Due to the single topology, easy integration of the model into common circuit simulators is possible.
Keywords :
MOS capacitors; Q-factor; UHF diodes; accumulation layers; capacitance; equivalent circuits; microwave diodes; semiconductor device models; varactors; 18 GHz; RF model; accumulation regions; accumulation-mode MOS varactor; channel resistance; depletion regions; equivalent circuit; parameter values; physical lumped elements; quality factor; Circuit simulation; Equations; Equivalent circuits; Object oriented modeling; Q factor; Radio frequency; SPICE; Semiconductor device modeling; Semiconductor process modeling; Varactors;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2003.815599
