Title :
40-Gbit/s OEIC on GaAs substrate through metamorphic buffer technology
Author :
Zhang, Y. ; Whelan, C.S. ; Leoni, R. ; Marsh, P.F. ; Hoke, W.E. ; Hunt, J.B. ; Laighton, C.M. ; Kazior, T.E.
Author_Institution :
Raytheon RF Components, Andover, MA, USA
Abstract :
An optoelectronic integrated circuit operating in the 1.55-μm wavelength range was realized on GaAs substrate through metamorphic technology. High indium content layers, metamorphically grown on a GaAs substrate, were used to fabricate the optoelectronic integrated circuits (OEICs) with -3 dB bandwidth of 40 GHz and 210 V/W of calculated responsivity. The analog OEIC photoreceiver consists of a 12-μm, top-illuminated p-i-n photodiode, and a traveling wave amplifier (TWA). This receiver shows 6 GHz wider bandwidth than a hybrid photoreceiver, which was built using comparable, but stand-alone metamorphic p-i-n diode and TWA. With the addition of a buffer amplifier, the OEIC shows 7 dB more gain than the hybrid counterpart. To our knowledge, this is the first 40 Gbit/s OEIC achieved on a GaAs substrate operating at 1.55 μm.
Keywords :
III-V semiconductors; gallium arsenide; integrated circuit technology; integrated optoelectronics; optical receivers; p-i-n photodiodes; substrates; travelling wave amplifiers; wideband amplifiers; 1.55 micron; 12 micron; 40 GHz; 40 Gbit/s; GaAs; GaAs substrate; OEIC photoreceiver; PIN photodiode; TWA; analog OEIC; high In content layers; metamorphic HEMT; metamorphic buffer technology; metamorphic growth; optoelectronic integrated circuit; responsivity; top-illuminated p-i-n photodiode; traveling wave amplifier; Bandwidth; Capacitive sensors; Costs; Gallium arsenide; HEMTs; Indium phosphide; Integrated circuit technology; Optoelectronic devices; P-i-n diodes; Photodiodes;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2003.815432
