Comparison of different high-linear LNA structures for PCS applications using SiGe HBT and low bias voltage

Author

Iturbide-Sanchez, E. ; Jardon-Aguilar, H. ; Tirado-Mendez, J.A.

Author_Institution

Dept. of Electr. Eng., Massachusetts Univ., Amherst, MA, USA

Volume

38

Issue

12

fYear

2002

fDate

6/6/2002 12:00:00 AM

Firstpage

536

Lastpage

538

Abstract

Different high-linearity low noise amplifier (LNA) structures have been designed, simulated and compared, providing good performance results concerning noise figure, bandwidth, power gain, intermodulation and gain compression, when a low-level voltage supply is used. The structures were designed to be used in personal communication systems (PCSs), operating at 1900 MHz using a SiGe heterojunction bipolar transistor (HBT) and 2.4 V bias polarisation

Keywords

Ge-Si alloys; UHF amplifiers; bipolar transistor circuits; circuit noise; feedback amplifiers; heterojunction bipolar transistors; intermodulation; mobile radio; personal communication networks; 1900 MHz; 2.4 V; PCS applications; SiGe; SiGe HBT; bandwidth; gain compression; heterojunction bipolar transistor; high-linearity LNA structures; intermodulation; low bias voltage; low noise amplifier structures; low-level voltage supply; noise figure; personal communication systems; power gain;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20020393

Filename

1012816