Title :
Study of nickel silicide contact on Si/Si1-xGex
Author :
Yang, Tsung-Hsi ; Luo, Guangli ; Chang, Chun-Yen ; Yang, Tsung-Yeh ; Tseng, Hua-Chou ; Chun-Yen Chang
Author_Institution :
Dept. of Mater. Sci. & Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
The properties of nickel silicide formed by depositing nickel on Si/p/sup +/-Si/sub 1-x/Ge/sub x/ layer are compared with that of nickel germanosilicide on p/sup +/-Si/sub 1-x/Ge/sub x/ layer formed by depositing Ni directly on p/sup +/-Si/sub 1-x/Ge/sub x/ layer without silicon consuming layer. After thermal annealing, nickel silicide on Si/p/sup +/-Si/sub 1-x/Ge/sub x/ layer shows lower sheet resistance and specific contact resistivity than that of nickel germanosilicide on p/sup +/-Si/sub 1-x/Ge/sub x/ layer. In addition, small junction leakage current is also observed for nickel silicide on a Si/p/sup +/-Si/sub 1-x/Ge/sub x//n-Si diode. In summary, with a Si consuming layer on top of the Si/sub 1-x/Ge/sub x/, the nickel silicide contact formed demonstrated improved electrical and materials characteristics as compared with the nickel germanosilicide contact which was formed directly on the Si/sub 1-x/Ge/sub x/ layer.
Keywords :
Ge-Si alloys; annealing; contact resistance; elemental semiconductors; leakage currents; nickel compounds; semiconductor device metallisation; semiconductor materials; semiconductor-metal boundaries; silicon; Ni silicide contact; NiSi-Si-Si/sub 1-x/Ge/sub x/; Si/p/sup +/-Si/sub 1-x/Ge/sub x/ layer; junction leakage current; sheet resistance; specific contact resistivity; thermal annealing; Annealing; CMOS technology; Contacts; Germanium silicon alloys; Nickel; Silicidation; Silicides; Silicon germanium; Temperature; Thermal resistance;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2003.815944
