Preparation of Iron Films by Dual Ion Beam Sputtering and Their Soft Magnetic Properties

The causes of differences in 4¿Ms and Hc values for iron thin films grown under the same conditions were studied. It was found that Hc reaches a minimum and 4¿Ms reaches a maximum when the radiation ion acceleration voltage is in the range 140 to 150 V. But the differences in values of Hc and 4¿Ms seem to be due to impurities like carbon. The presence of wide peaks (thought to be Fe (b.c.c) (200) plane) in the x-ray diffraction diagrams for samples with comparatively high 4¿Ms values suggests that the long-distance ordering improvement shown in the x-ray diffraction diagrams relates to the increase in 4¿Ms values.