DocumentCode :
770697
Title :
Diode-End-Pumped Passively CW Mode-Locked Nd:YLF Laser by the LT-In 
Ga 
As Absorber
Ga As AbsorberAuthor :
Pan, Shu-Di ; He, Jing-liang ; Hou, Yu-E ; Fan, Ya-Xian ; Wang, Hui-Tian ; Wang, Yong-Gang ; Ma, Xiao-Yu
Author_Institution :
Coll. of Phys. & Electron., Shandong Normal Univ., Ji´´nan
Volume :
42
Issue :
10
fYear :
2006
Firstpage :
1097
Lastpage :
1100
Abstract :
We have demonstrated a self-staring passively continuous-wave mode-locked diode end-pumped Nd:YLF laser with a semiconductor saturable absorber mirror of single-quantum-well (In0.25Ga0.75 As) grown by metal-organic chemical-vapor deposition technique at low temperature. The saturable absorber was used as nonlinear absorber and output coupler simultaneously. Stable pulse duration of 3 ps has been achieved at the repetition rate of 98 MHz. The average output power was 530 mW at 1053 nm under the incident pump power of 10 W, corresponding to the peak power of 1.8 kW and pulse energy of 5.4 nJ
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; indium compounds; laser mirrors; laser mode locking; neodymium; optical pulse generation; optical pumping; optical saturable absorption; semiconductor growth; semiconductor quantum wells; solid lasers; yttrium compounds; 1.8 kW; 10 W; 1053 nm; 3 ps; 5.4 nJ; 530 mW; 98 MHz; In0.25Ga0.75As; LiYF4:Nd; Nd:YLF laser; diode-end-pumping; metal-organic chemical-vapor deposition; nonlinear absorber; output coupler; passive mode-locking; semiconductor saturable absorber mirror; stable pulse generation; Fiber lasers; Laser mode locking; Laser theory; Mirrors; Physics; Pulse amplifiers; Pump lasers; Semiconductor diodes; Semiconductor lasers; Solid lasers; Diode-pumped lasers; mode-locked lasers; neodymium-solid-state lasers; semiconductor absorber;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.2006.882032
Filename :
1704935
Link To Document :
