• DocumentCode
    770816
  • Title

    Bootstrapped switch without bulk effect in standard CMOS technology

  • Author

    Waltari, M. ; Halonen, K.

  • Author_Institution
    Electron. Circuit Design Lab., Helsinki Univ. of Technol., Finland
  • Volume
    38
  • Issue
    12
  • fYear
    2002
  • fDate
    6/6/2002 12:00:00 AM
  • Firstpage
    555
  • Lastpage
    557
  • Abstract
    A bootstrapped switch, where the switch transistor gate as well as the bulk node track the input signal, is presented. The circuit utilising a PMOS switch device does not need a triple-well process and can thus be implemented in a standard CMOS technology. Simulations show 20 dB improved second harmonic compared to a conventional bootstrapped switch.
  • Keywords
    CMOS integrated circuits; bootstrap circuits; field effect transistor switches; harmonic distortion; CMOS technology; PMOS transistor; bootstrapped switch; bulk effect; circuit simulation; harmonic distortion;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20020376
  • Filename
    1012849