DocumentCode
770816
Title
Bootstrapped switch without bulk effect in standard CMOS technology
Author
Waltari, M. ; Halonen, K.
Author_Institution
Electron. Circuit Design Lab., Helsinki Univ. of Technol., Finland
Volume
38
Issue
12
fYear
2002
fDate
6/6/2002 12:00:00 AM
Firstpage
555
Lastpage
557
Abstract
A bootstrapped switch, where the switch transistor gate as well as the bulk node track the input signal, is presented. The circuit utilising a PMOS switch device does not need a triple-well process and can thus be implemented in a standard CMOS technology. Simulations show 20 dB improved second harmonic compared to a conventional bootstrapped switch.
Keywords
CMOS integrated circuits; bootstrap circuits; field effect transistor switches; harmonic distortion; CMOS technology; PMOS transistor; bootstrapped switch; bulk effect; circuit simulation; harmonic distortion;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20020376
Filename
1012849
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