Title :
Bootstrapped switch without bulk effect in standard CMOS technology
Author :
Waltari, M. ; Halonen, K.
Author_Institution :
Electron. Circuit Design Lab., Helsinki Univ. of Technol., Finland
fDate :
6/6/2002 12:00:00 AM
Abstract :
A bootstrapped switch, where the switch transistor gate as well as the bulk node track the input signal, is presented. The circuit utilising a PMOS switch device does not need a triple-well process and can thus be implemented in a standard CMOS technology. Simulations show 20 dB improved second harmonic compared to a conventional bootstrapped switch.
Keywords :
CMOS integrated circuits; bootstrap circuits; field effect transistor switches; harmonic distortion; CMOS technology; PMOS transistor; bootstrapped switch; bulk effect; circuit simulation; harmonic distortion;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20020376
