A new a-Si:H thin-film transistor pixel circuit for active-matrix organic light-emitting diodes

Author

Goh, Joon-Chul ; Jang, Jin ; Cho, Kyu-Sik ; Kim, Choong-ki

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Korea Adv. Inst. of Sci. & Technol., Daejon, South Korea

Volume

24

Issue

9

fYear

2003

Firstpage

583

Lastpage

585

Abstract

We propose a new pixel circuit using hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs), composed of three switching and one driving TFT, for active-matrix organic light-emitting diodes (AMOLEDs) with a voltage source method. The circuit simulation results based on the measured threshold voltage shift of a-Si:H TFTs by gate-bias stress indicate that this circuit compensates for the threshold voltage shifts over 10000 h of operation.

Keywords

amorphous semiconductors; elemental semiconductors; hydrogen; organic light emitting diodes; silicon; thin film transistors; Si:H; active-matrix organic light emitting diode; circuit simulation; hydrogenated amorphous silicon thin film transistor; pixel circuit; threshold voltage shift; voltage source method; Active matrix organic light emitting diodes; Active matrix technology; Amorphous silicon; Circuit simulation; Organic light emitting diodes; Stress measurement; Switching circuits; Thin film transistors; Threshold voltage; Voltage measurement;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2003.816590

Filename

1224525