Title :
Three-transistor one-time programmable (OTP) ROM cell array using standard CMOS gate oxide antifuse
Author :
Kim, Jinbong ; Lee, Kwyro
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., KAIST, South Korea
Abstract :
A three-transistor (3-T) cell CMOS one-time programmable (OTP) ROM array using CMOS antifuse (AF) based on permanent breakdown of MOSFET gate oxide is proposed, fabricated and characterized. The proposed 3-T OTP cell for ROM array is composed of an nMOS AF, a high-voltage blocking nMOS, and cell access transistor, all compatible with standard CMOS technology. The experimental results show that the proposed structure can be a viable technology option of high-density CMOS OTP ROM array for modern digital as well as analog circuits.
Keywords :
CMOS memory circuits; PROM; semiconductor device breakdown; CMOS gate oxide antifuse; MOSFET gate oxide breakdown; cell access transistor; high-voltage blocking nMOS; three-transistor one-time programmable ROM cell array; CMOS analog integrated circuits; CMOS digital integrated circuits; CMOS logic circuits; CMOS memory circuits; CMOS process; CMOS technology; Electric breakdown; MOS devices; Random access memory; Read only memory;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2003.815429
