Improved independent gate N-type FinFET fabrication and characterization

Author

Fried, David M. ; Duster, Jon S. ; Kornegay, Kevin T.

Author_Institution

Sch. of Electr. & Comput. Eng., Cornell Univ., Ithaca, NY, USA

Volume

24

Issue

9

fYear

2003

Firstpage

592

Lastpage

594

Abstract

N-type independent gate FinFETs (IGFinFETs) have been fabricated and characterized. Previous published results for this structure highlighted processing deficiencies. Several process enhancements have improved device results beyond those previously reported. These process improvements are presented, and the resulting device is demonstrated. Device results for 2 micron channel length devices are shown. Six decades of drain current suppression and low gate leakage currents are achieved. Subthreshold slope of 200 mV/dec and a threshold voltage tuning range of 1.7 V are demonstrated. This device combines the behavioral characteristics of independent-double-gate MOSFETs with the processing advantages and integration of FinFETs.

Keywords

MOSFET; leakage currents; 2 micron; double-gate MOSFET; drain current; fabrication process; gate leakage current; independent gate N-type FinFET; subthreshold slope; threshold voltage tuning range; Circuits; Electrodes; Etching; Fabrication; FinFETs; Leakage current; Lithography; MOSFETs; Silicon; Threshold voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2003.815946

Filename

1224528