Title :
Room temperature operation of type-II GaAsSb/InGaAs quantum well laser on GaAs substrates
Author :
Ryu, S.-W. ; Dapkus, P.D.
Author_Institution :
Dept. of Electr. Eng., Univ. of Southern California, Los Angeles, CA, USA
fDate :
6/6/2002 12:00:00 AM
Abstract :
A GaAsSb/InGaAs type-II quantum well laser diode on GaAs substrates was demonstrated for the first time. Threshold current density of 610 A/cm2 was obtained from a 1.1 mm-long broad area laser with the emission wavelength of 1.2 μm
Keywords :
III-V semiconductors; current density; gallium arsenide; indium compounds; quantum well lasers; 1.1 mm; 1.2 micron; GaAs; GaAsSb-InGaAs-GaAs; GaAsSb/InGaAs/GaAs; broad area laser; emission wavelength; quantum well laser; threshold current density; type-II staggered conduction;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20020410
