• DocumentCode
    771112
  • Title

    Optical switch-on of silicon carbide thyristor

  • Author

    Levinshtein, M.E. ; Ivanov, P.A. ; Agarwal, A.K. ; Palmour, J.W.

  • Author_Institution
    Ioffe Inst., Acad. of Sci., St. Petersburg, Russia
  • Volume
    38
  • Issue
    12
  • fYear
    2002
  • fDate
    6/6/2002 12:00:00 AM
  • Firstpage
    592
  • Lastpage
    593
  • Abstract
    Optical switch-on of a silicon carbide thyristor has been demonstrated for the first time. A 2.6 kV 4H-SiC thyristor can be turned on by the light pulse of an ultraviolet laser with wavelength λ=337 nm. The threshold energy of the light pulse, required to turn the thyristor on, is Jth ≃ 0.75 μJ. At light pulse energy of J ~ 15 μJ the thyristor is turned on extremely fast and uniformly over its full area
  • Keywords
    laser beam applications; photothyristors; semiconductor materials; silicon compounds; wide band gap semiconductors; 0.75 muJ; 15 muJ; 2.6 kV; 337 nm; SiC; full area; light pulse; optical switch-on; pulse energy; threshold energy; thyristor; ultraviolet laser;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20020415
  • Filename
    1012903
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=771112