مرکز منطقه ای اطلاع رساني علوم و فناوري

DocumentCode :

771284

Title :

Novel HEMT layout: the RoundHEMT

Author :

Marso, M. ; Schimpf, K. ; Fox, A. ; van der Hart, A. ; Hardtdegen, H. ; Hollfelder, M. ; Kordos, P. ; Lüth, H.

Author_Institution :

Inst. fur Schicht- und Ionentechnik, Forschungszentrum Julich GmbH, Germany

Volume :

Issue :

fYear :

1995

fDate :

3/30/1995 12:00:00 AM

Firstpage :

589

Lastpage :

591

Abstract :

A novel HEMT layout with ringshaped gate is reported. This conception avoids the problems related to mesa etching at the active region and provides additional possibilities for circuit design. The layer structure of the investigated device is based on an Al-free InP/InGaAs material system. Transistors with a gate length of 0.7 μm show an f_T of 40 GHz and an f_max of 117 GHz. These values are similar to results obtained with the conventional HEMT design

Keywords :

high electron mobility transistors; microwave field effect transistors; 0.7 micron; 117 GHz; 40 GHz; HEMT layout; InP-InGaAs; RoundHEMT; ringshaped gate;

fLanguage :

English

Journal_Title :

Electronics Letters

Publisher :

iet

ISSN :

0013-5194

Type :

jour

DOI :

10.1049/el:19950367

Filename :

381779

Link To Document :

https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=771284