DocumentCode
771293
Title
Low-temperature Pd bonding of III-V semiconductors
Author
Tan, I.H. ; Reaves, C. ; Holmes, A.L., Jr. ; Hu, E.L. ; Bowers, J.E. ; DenBaars, S.
Author_Institution
California Univ., Santa Barbara, CA, USA
Volume
31
Issue
7
fYear
1995
fDate
3/30/1995 12:00:00 AM
Firstpage
588
Lastpage
589
Abstract
The authors have developed a low-temperature Pd bonding technique for integrating InP structures onto GaAs substrates. The solid phase reactions of Pd with both InP and GaAs allows Pd to be used as a sandwiched ohmic contact between two dissimilar materials. The InP-Pd-GaAs interfaces have been characterised by scanning electron microscopy, optical reflectance, and electrical transport measurement
Keywords
III-V semiconductors; gallium arsenide; indium compounds; ohmic contacts; p-i-n diodes; palladium; reflectivity; scanning electron microscopy; semiconductor-metal boundaries; wafer bonding; GaAs; GaAs substrates; III-V semiconductors; InP structures; InP-Pd-GaAs; electrical transport measurement; low-temperature Pd bonding technique; optical reflectance; sandwiched ohmic contact; scanning electron microscopy; solid phase reactions;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19950398
Filename
381780
Link To Document