• DocumentCode
    771326
  • Title

    Effect of proton isolation on DC and RF performance of GaAs planar doped barrier diodes

  • Author

    Hutchinson, S. ; Carr, M. ; Gwilliam, R. ; Kelly, M.J. ; Sealy, B.J.

  • Volume
    31
  • Issue
    7
  • fYear
    1995
  • fDate
    3/30/1995 12:00:00 AM
  • Firstpage
    583
  • Lastpage
    585
  • Abstract
    Planar doped barrier (PDB) diodes have been fabricated using both mesa and proton implant isolation. Comparative measurements of DC characteristics, RF noise figure and tangential sensitivity indicate that proton implant isolation gives devices of favourable performance following annealing at 290°C for 20 min, with the advantage of a planar process
  • Keywords
    III-V semiconductors; annealing; gallium arsenide; ion implantation; isolation technology; microwave diodes; proton effects; semiconductor device noise; 20 min; 290 C; DC characteristics; GaAs; RF noise figure; RF performance; SHF; annealing; microwave performance; planar doped barrier diodes; proton implant isolation; tangential sensitivity;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19950401
  • Filename
    381783
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=771326