A long-wavelength MEMS tunable VCSEL incorporating a tunnel junction

Author

Kner, P. ; Kageyama, T. ; Boucart, J. ; Stone, R. ; Sun, D. ; Nabiev, R.F. ; Pathak, R. ; Yuen, W.

Author_Institution

Bandwidth9, Fremont, CA, USA

Volume

15

Issue

9

fYear

2003

Firstpage

1183

Lastpage

1185

Abstract

In this letter, we describe the performance of a microelectromechanical system tunable vertical-cavity surface-emitting laser operating at 1550 nm and incorporating a tunnel junction for improved current injection and reduced optical loss. These lasers exhibit single-mode powers greater than 0.28 mW over 10 nm of tuning. Peak single-mode powers are greater than 0.8 mW and minimum threshold currents are less than 1 mA.

Keywords

III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; indium compounds; laser tuning; micro-optics; micromechanical devices; quantum well lasers; InAlGaAs; long-wavelength MEMS tunable VCSEL; microelectromechanical system; minimum threshold currents; optical loss; quantum-well laser; single-mode powers; tunable vertical-cavity surface-emitting laser; tunnel junction; Laser tuning; Microelectromechanical systems; Micromechanical devices; Optical losses; Optical tuning; Performance loss; Power lasers; Surface emitting lasers; Tunable circuits and devices; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2003.816661

Filename

1224573