DocumentCode :
771475
Title :
Wavelength shift in vertical cavity laser arrays on a patterned substrate
Author :
Eng, L.E. ; Bacher, K. ; Yuen, W. ; Larson, M. ; Ding, G. ; Harris, J.S., Jr ; Chang-Hasnain, C.J.
Author_Institution :
Edward L. Ginzton Lab., Stanford Univ., CA, USA
Volume :
31
Issue :
7
fYear :
1995
fDate :
3/30/1995 12:00:00 AM
Firstpage :
562
Lastpage :
563
Abstract :
The authors demonstrate a spatially chirped emission wavelength in vertical cavity surface emitting laser (VCSEL) arrays grown by molecular beam epitaxy. The wavelength shift is due to a lateral thickness variation in the Al0.2Ga0.8As cavity, which is induced by a substrate temperature profile during growth. A 20 nm shift in lasing wavelength is obtained in a VCSEL array
Keywords :
molecular beam epitaxial growth; quantum well lasers; semiconductor growth; semiconductor laser arrays; surface emitting lasers; Al0.2Ga0.8As; VCSEL array; lasing wavelength; lateral thickness variation; molecular beam epitaxy; patterned substrate; spatially chirped emission wavelength; substrate temperature profile; vertical cavity laser arrays; wavelength shift;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19950368
Filename :
381797
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=771475
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