Title :
Record low-threshold index-guided InGaAs/GaAlAs vertical-cavity surface-emitting laser with a native oxide confinement structure
Author :
Hayashi, Y. ; Mukaihara, T. ; Hatori, N. ; Ohnoki, N. ; Matsutani, A. ; Koyama, F. ; Iga, K.
Author_Institution :
Precision & Intelligence Lab., Tokyo Inst. of Technol., Japan
fDate :
3/30/1995 12:00:00 AM
Abstract :
An index-guided InGaAs/GaAlAs vertical-cavity surface-emitting laser with a native oxide confinement structure has been proposed and fabricated. A record threshold current of 70 μA was achieved with 5μm-diameter core device. The proposed structure provides strong electrical and optical confinements. Also a reduction in nonradiative recombination and an improvement in the thermal resistance can be expected
Keywords :
III-V semiconductors; aluminium compounds; electron-hole recombination; gallium arsenide; indium compounds; quantum well lasers; surface emitting lasers; 5 micron; 70 muA; InGaAs-GaAlAs; index-guided laser; native oxide confinement structure; nonradiative recombination; optical confinement; thermal resistance; threshold current; vertical-cavity surface-emitting laser;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950391
