DocumentCode
771517
Title
Measurement of differential gain and linewidth enhancement factor of InGaAs vertical cavity surface emitting laser
Author
Dowd, P. ; Summers, Huw D. ; White, Ian H. ; Tan, M.R.T. ; Houng, Y.M. ; Wang, S.Y.
Author_Institution
Sch. of Phys., Bath Univ.
Volume
31
Issue
7
fYear
1995
fDate
3/30/1995 12:00:00 AM
Firstpage
557
Lastpage
559
Abstract
The differential gain of an InGaAs/GaAs vertical cavity surface emitting laser (VCSEL) has been obtained through measurement of the subthreshold spectral linewidth. The results are in close agreement with a theoretical model for a VCSEL operating at the peak of the gain spectrum. The linewidth enhancement factor has been measured to be ~0.7 at low bias currents again in agreement with theory
Keywords
III-V semiconductors; gallium arsenide; indium compounds; quantum well lasers; surface emitting lasers; InGaAs-GaAs; VCSEL; bias currents; differential gain; gain spectrum peak; linewidth enhancement factor; subthreshold spectral linewidth; vertical cavity surface emitting laser;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19950371
Filename
381800
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