Title :
Measurement of differential gain and linewidth enhancement factor of InGaAs vertical cavity surface emitting laser
Author :
Dowd, P. ; Summers, Huw D. ; White, Ian H. ; Tan, M.R.T. ; Houng, Y.M. ; Wang, S.Y.
Author_Institution :
Sch. of Phys., Bath Univ.
fDate :
3/30/1995 12:00:00 AM
Abstract :
The differential gain of an InGaAs/GaAs vertical cavity surface emitting laser (VCSEL) has been obtained through measurement of the subthreshold spectral linewidth. The results are in close agreement with a theoretical model for a VCSEL operating at the peak of the gain spectrum. The linewidth enhancement factor has been measured to be ~0.7 at low bias currents again in agreement with theory
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; quantum well lasers; surface emitting lasers; InGaAs-GaAs; VCSEL; bias currents; differential gain; gain spectrum peak; linewidth enhancement factor; subthreshold spectral linewidth; vertical cavity surface emitting laser;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950371
