• DocumentCode
    771527
  • Title

    High-power and high-efficiency 1.3 μm InAsP compressively-strained MQW lasers at high temperatures

  • Author

    Oohashi, H. ; Seki, S. ; Hirono, T. ; Sugiura, H. ; Amano, T. ; Ueki, M. ; Nakano, J. ; Yamamoto, M. ; Tohmori, Y. ; Fukuda, M. ; Yokoyama, K.

  • Author_Institution
    NTT Opto-Electron. Labs., Kanagawa, Japan
  • Volume
    31
  • Issue
    7
  • fYear
    1995
  • fDate
    3/30/1995 12:00:00 AM
  • Firstpage
    556
  • Lastpage
    557
  • Abstract
    A high output power of 37 mW and high slope efficiency of more than 0.55 W/A at 90°C has been obtained by using 1.05 μm InGaAsP barrier layers with optimised composition for 1.3 μm InAsP compressively-strained MQW laser diodes
  • Keywords
    III-V semiconductors; indium compounds; quantum well lasers; 1.3 mum; 37 mW; 90 degC; III-V semiconductors; InAsP; compressively-strained MQW lasers; optimised composition; output power; slope efficiency;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19950400
  • Filename
    381801
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=771527