High-power and high-efficiency 1.3 μm InAsP compressively-strained MQW lasers at high temperatures
Author :
Oohashi, H. ; Seki, S. ; Hirono, T. ; Sugiura, H. ; Amano, T. ; Ueki, M. ; Nakano, J. ; Yamamoto, M. ; Tohmori, Y. ; Fukuda, M. ; Yokoyama, K.
Author_Institution :
NTT Opto-Electron. Labs., Kanagawa, Japan
Volume :
31
Issue :
7
fYear :
1995
fDate :
3/30/1995 12:00:00 AM
Firstpage :
556
Lastpage :
557
Abstract :
A high output power of 37 mW and high slope efficiency of more than 0.55 W/A at 90°C has been obtained by using 1.05 μm InGaAsP barrier layers with optimised composition for 1.3 μm InAsP compressively-strained MQW laser diodes
