DocumentCode :
771666
Title :
Bi-Substituted Garnet Films For Magneto-Optic Memory -Sputter Opposition In Ar-H2 Gas-
Author :
Okazaki, T. ; Gomi, M. ; Abe, M.
Author_Institution :
Department of Physical Electronics, Tokyo Institute of Technology.
Volume :
2
Issue :
11
fYear :
1987
Firstpage :
1049
Lastpage :
1051
Abstract :
The relation between film characteristics and oxygen deficits was investigated. The amount of Bi in the film drastically decreased with increase in the amount of hydrogen. This may be due to the weakness of the Bi affinity to oxygen. The X-ray diffraction intensity of film produced by introducing hydrogen at 5% of Ar is significantly weaker than that for film grown in pure Ar. Film grown in Ar + H2 showed improved optical homogeneity at the crystal grain boundaries resulting in large reduction in light intensity variation coming close to that of the amorphous film.
Keywords :
Amorphous materials; Argon; Bismuth; Crystallization; Garnet films; Grain boundaries; Hydrogen; Magnetic films; Optical films; X-ray diffraction;
fLanguage :
English
Journal_Title :
Magnetics in Japan, IEEE Translation Journal on
Publisher :
ieee
ISSN :
0882-4959
Type :
jour
DOI :
10.1109/TJMJ.1987.4549683
Filename :
4549683
Link To Document :
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