Demonstration of 256 x 256 focal plane array based on Al-free GaInAs-InP QWIP

Author

Jiang, Jutao ; Mi, Kan ; McClintock, Ryan ; Razeghi, Manijeh ; Brown, Gail J. ; Jelen, Chris

Author_Institution

Center for Quantum Devices, Northwestern Univ., Evanston, IL, USA

Volume

15

Issue

9

fYear

2003

Firstpage

1273

Lastpage

1275

Abstract

We report the first demonstration of an infrared focal plane array based on aluminum-free GaInAs-InP quantum-well infrared photodetectors (QWIPs). The long wavelength QWIP structure was grown via a low-pressure metal-organic chemical vapor deposition. Corrugated light coupling structure of QWIP was fabricated with a dry etching process. A 256/spl times/256 detector array was also fabricated with dry etching and hybridized to a Litton readout integrated circuit via indium bumps. A unique positive lithography method was developed to perform indium-bump liftoff. The noise equivalent differential temperature (NE/spl Delta/T) of 29 mK was achieved at 70 K with f/2 optics.

Keywords

III-V semiconductors; MOCVD; focal planes; gallium arsenide; indium compounds; infrared detectors; optical fabrication; photodetectors; quantum well devices; 29 mK; 70 K; Al-free GaInAs-InP QWIP; GaInAs-InP; Litton readout integrated circuit; corrugated light coupling structure; dry etching; dry etching process; focal plane array; focal plane array based quantum-well infrared photodetectors; indium bumps; indium-bump liftoff; low-pressure metal-organic chemical vapor deposition; noise equivalent differential temperature; positive lithography method; quantum-well devices; Chemical vapor deposition; Coupling circuits; Detectors; Dry etching; Hybrid integrated circuits; Optical coupling; Optical noise; Photodetectors; Quantum wells; Sensor arrays;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2003.816667

Filename

1224603