Title :
High-saturation-current InP-InGaAs photodiode with partially depleted absorber
Author :
Li, Xiaowei ; Li, Ning ; Zheng, Xiaoguang ; Demiguel, Stephane ; Campbell, J.C. ; Tulchinsky, David A. ; Williams, Keith J.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Texas, Austin, TX, USA
Abstract :
A high-saturation-current InGaAs photodiode (PD) with a partially depleted absorber is demonstrated. Optical responsivity of 0.58 A/W and over 1.1 W of dissipated electrical power is achieved. Small signal compression current of 110 and 57 mA is measured at radio-frequency bandwidths of 1 and 10 GHz, respectively. This continuous photocurrent is believed to be the highest reported value for a p-i-n InGaAs PD at these bandwidths.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical communication equipment; optical saturable absorption; p-i-n photodiodes; photodiodes; 1 GHz; 1.1 W; 10 GHz; 110 mA; 57 mA; InGaAs; InP-InGaAs photodiode; continuous photocurrent; dissipated electrical power; high-saturation-current; p-i-n InGaAs photodiode; partially depleted absorber; radio-frequency bandwidths; responsivity; small signal compression current; Bandwidth; Indium gallium arsenide; Indium phosphide; Optical refraction; Optical saturation; PIN photodiodes; Photoconductivity; Power generation; Thermal conductivity; Thermal management;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2003.816118
