Suppression of bandgap shifts in GaAs/AlGaAs quantum wells using strontium fluoride caps

Author

Beauvais, J. ; Marsh, John H. ; Kean, A.H. ; Bryce, A.C. ; Button, C.

Author_Institution

Glasgow Univ., UK

Volume

28

Issue

17

fYear

1992

Firstpage

1670

Lastpage

1672

Abstract

Quantum well intermixing using dielectric caps has been studied using photoluminescence at 77 K. The structures which have been investigated, including shallow depth single quantum wells and multiquantum well waveguiding material, are highly sensitive to the presence of surface defects during annealing. Samples capped with either silicon nitride or silica have shown considerable energy shifts after processing in a rapid thermal annealer, and large energy shifts have also been found in uncapped material. Samples capped with strontium fluoride have shown negligible intermixing of the quantum wells.

Keywords

III-V semiconductors; aluminium compounds; annealing; chemical interdiffusion; dielectric thin films; energy gap; gallium arsenide; luminescence of inorganic solids; optical waveguides; photoluminescence; semiconductor quantum wells; strontium compounds; 77 K; GaAs-AlGaAs quantum wells; MQW; SrF₂ caps; annealing; bandgap shift suppression; chemical intermixing prevention; dielectric caps; multiquantum well waveguiding material; photoluminescence; quantum wells; semiconductors; shallow depth single quantum wells; surface defects;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19921062

Filename

156251