DocumentCode :
771993
Title :
Optimisation of nonlinear optical rectification in linearly graded AlGaAs quantum wells
Author :
Dave, Digant P.
Author_Institution :
Texas A&M Univ., College Station, TX, USA
Volume :
28
Issue :
17
fYear :
1992
Firstpage :
1603
Lastpage :
1605
Abstract :
A simple analysis is presented to show that nonlinear optical rectification can be significantly enhanced by proper choice of composition gradient in linearly graded AlGaAs quantum wells. Numerical results of such an optimisation of nonlinear optical rectification at 10.6 mu m are presented.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; nonlinear optics; semiconductor quantum wells; 10.6 micron; composition gradient; linearly graded AlGaAs quantum wells; nonlinear optical rectification; numerical results; optimisation;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19921020
Filename :
156278
Link To Document :
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