• DocumentCode
    772023
  • Title

    Calculation of gain and noise with dead space for GaAs and Alx Ga1-xAs avalanche photodiode

  • Author

    Li, Xiaowei ; Zheng, Xiaoguang ; Wang, Shuling ; Ma, Feng ; Campbell, Joe C.

  • Author_Institution
    Microelectron. Res. Center, Texas Univ., Austin, TX, USA
  • Volume
    49
  • Issue
    7
  • fYear
    2002
  • fDate
    7/1/2002 12:00:00 AM
  • Firstpage
    1112
  • Lastpage
    1117
  • Abstract
    It is well known that, as a result of the nonlocal nature of impact ionization, the noise of avalanche photodiodes decreases as the thickness of the multiplication region is reduced. In this paper, we present an alternative technique to calculate the gain distribution, including the dead-space effect, by numerical solution of the recursive equations. This method yields the average gain, the multiplication noise, and gain distribution curves. The results are compared with simple Monte Carlo simulation and the Z-transform technique
  • Keywords
    III-V semiconductors; Monte Carlo methods; Z transforms; aluminium compounds; avalanche photodiodes; gallium arsenide; impact ionisation; semiconductor device models; semiconductor device noise; AlGaAs; GaAs; Monte Carlo simulation; Z-transform; avalanche multiplication; avalanche photodiode; dead space model; excess noise factor; gain distribution; impact ionization; recursive equation; Avalanche photodiodes; Charge carrier processes; Circuit noise; Equations; Gallium arsenide; Helium; Impact ionization; Mathematical analysis; Noise reduction; PIN photodiodes;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2002.1013264
  • Filename
    1013264
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=772023