Title :
Calculation of gain and noise with dead space for GaAs and Alx Ga1-xAs avalanche photodiode
Author :
Li, Xiaowei ; Zheng, Xiaoguang ; Wang, Shuling ; Ma, Feng ; Campbell, Joe C.
Author_Institution :
Microelectron. Res. Center, Texas Univ., Austin, TX, USA
fDate :
7/1/2002 12:00:00 AM
Abstract :
It is well known that, as a result of the nonlocal nature of impact ionization, the noise of avalanche photodiodes decreases as the thickness of the multiplication region is reduced. In this paper, we present an alternative technique to calculate the gain distribution, including the dead-space effect, by numerical solution of the recursive equations. This method yields the average gain, the multiplication noise, and gain distribution curves. The results are compared with simple Monte Carlo simulation and the Z-transform technique
Keywords :
III-V semiconductors; Monte Carlo methods; Z transforms; aluminium compounds; avalanche photodiodes; gallium arsenide; impact ionisation; semiconductor device models; semiconductor device noise; AlGaAs; GaAs; Monte Carlo simulation; Z-transform; avalanche multiplication; avalanche photodiode; dead space model; excess noise factor; gain distribution; impact ionization; recursive equation; Avalanche photodiodes; Charge carrier processes; Circuit noise; Equations; Gallium arsenide; Helium; Impact ionization; Mathematical analysis; Noise reduction; PIN photodiodes;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2002.1013264
