Title :
Thin-film ferroelectrics of PZT of sol-gel processing
Author :
Dey, S.K. ; Budd, K.D. ; Payne, D.A.
Author_Institution :
Dept. of Ceramic Eng., Illinois Univ., Urbana, IL, USA
Abstract :
The ferroelectric effect has been demonstrated for sol-gel derived lead zirconate titanate (PZT) (53/47) thin films. The respective values of coercive field and remanent polarization were 4*10/sup 6/ V/m and 0.36 C/m/sup 2/. The thin-film fabrication process is simple and compatible with Si planar technology, and offers a wide variety of potential uses for counting, memory, and integrated optical circuit applications.<>
Keywords :
ferroelectric materials; ferroelectric thin films; lead compounds; titanium compounds; zirconium compounds; PZT; PbZrO3TiO3; coercive field; ferroelectrics; integrated optical circuit; remanent polarization; sol-gel processing; thin films; Ferroelectric materials; Integrated circuit technology; Integrated optics; Optical device fabrication; Optical films; Optical polarization; Semiconductor thin films; Thin film circuits; Titanium compounds; Transistors;
Journal_Title :
Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on
