DocumentCode
772104
Title
An 8-bit 800- 
1.23-MS/s Successive Approximation ADC in SOI CMOS
Author
Culurciello, Eugenio ; Andreou, Andreas G.
Author_Institution
Dept. of Electr. Eng., Yale Univ., New Haven, CT
Volume
53
Issue
9
fYear
2006
Firstpage
858
Lastpage
861
Abstract
We report on an 8-bit successive approximation analog-to-digital converter (SA-ADC) that was designed and fabricated in 0.5-mum silicon on sapphire CMOS technology. The SA-ADC is capable of 32-MHz operation, providing 1.23-MS/s conversion rates, and consumes 800 muW at 3.3-V supply. The lack of substrate parasitic capacitances enables the use of small-area capacitors and reduces the noise coupling to the analog nodes. The circuits employ MOS transistors of different thresholds to optimize the performance and power dissipation of the system
Keywords
CMOS digital integrated circuits; aluminium compounds; analogue-digital conversion; sapphire; silicon; silicon-on-insulator; 0.5 micron; 3.3 V; 32 MHz; 8 bit; 800 muW; MOS transistors; SOI CMOS; Si-Al2O3; analog-to-digital converter; power dissipation; silicon-on-insulator; successive approximation; Analog-digital conversion; CMOS technology; Circuit noise; Coupling circuits; MOS capacitors; MOSFETs; Noise reduction; Parasitic capacitance; Power dissipation; Silicon; Analog-to-digital converters (ADCs); low power; low voltage; silicon-on-insulator (SOI); silicon-on-sapphire (SOS); successive approximation (SA);
fLanguage
English
Journal_Title
Circuits and Systems II: Express Briefs, IEEE Transactions on
Publisher
ieee
ISSN
1549-7747
Type
jour
DOI
10.1109/TCSII.2006.880021
Filename
1705054
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