DocumentCode :
772113
Title :
New a-SiC, optically controlled, thyristor-like switch
Author :
Dimitriadis, E.I. ; Geogoulas, N. ; Thanailakis, A.
Author_Institution :
Democritus Univ. of Thrace, Xanthi, Greece
Volume :
28
Issue :
17
fYear :
1992
Firstpage :
1622
Lastpage :
1624
Abstract :
A new multilayer a-SiC thin film based switch was successfully fabricated and studied for the first time. The device has a forward breakover voltage VBF=140 V and exhibits a reversible decrease of VBF with increasing illumination intensity. The behaviour of this switch is analogous to that of a thyristor.
Keywords :
amorphous semiconductors; photoelectric devices; semiconductor switches; silicon compounds; thyristors; 140 V; forward breakover voltage; illumination intensity; multilayer amorphous SiC thin film; optically controlled thyristor like switch; optoelectronic applications; photosensitivity;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19921032
Filename :
156290
Link To Document :
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