Molecular beam epitaxy

Author

Yong, Tze-Yiu

Author_Institution

Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ, USA

Volume

8

Issue

3

fYear

1989

Firstpage

18

Lastpage

22

Abstract

A tutorial review of molecular beam epitaxial (MBE) growth of elemental, compound and alloy semiconductor films is presented. MBE is carried out on a heated substrate under ultra-high-vacuum (UHV) conditions (total pressure <10/sup -10/ torr) by directing one or more thermal energy beams of atoms or molecules onto the crystalline surface of a substrate where they can react. The advantages of MBE are discussed. A description is given of the UHV techniques used, preparation of the substrate, the substrate holder, beam sources, furnace shutters, and analytical devices for monitoring the process.<>

Keywords

molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; 1E-10 torr; MBE; UHV; alloy; analytical devices; beam sources; compound; elemental; furnace shutters; heated substrate; molecular beam epitaxial growth; monitoring; semiconductor films; substrate holder; thermal energy beams; ultra-high-vacuum; Atomic beams; Atomic layer deposition; Chemical analysis; Etching; Molecular beam epitaxial growth; Optical materials; Substrates; Surface contamination; Temperature; Vacuum technology;

fLanguage

English

Journal_Title

Potentials, IEEE

Publisher

ieee

ISSN

0278-6648

Type

jour

DOI

10.1109/45.41532

Filename

41532