DocumentCode :
77216
Title :
Al 
In 
P SAM-APD as a Blue-Green Detector
Author :
Jeng Shiuh Cheong ; Ong, J.S.L. ; Jo Shien Ng ; Krysa, A.B. ; David, J.P.R.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. of Sheffield, Sheffield, UK
Volume :
20
Issue :
6
fYear :
2014
fDate :
Nov.-Dec. 2014
Firstpage :
142
Lastpage :
146
Abstract :
We demonstrate an Al0.52In0.48 P homo-junction Separate Absorption Multiplication Avalanche Photodiode as a detector with narrow spectral response in the blue-green part of the optical spectrum. Due to its wide band-gap, this device has a dark current density of <; 8 nA cm-2 at 99.9% of the breakdown voltage at room temperature. This device has a peak responsivity at 483 nm of 0.15 A/W when punched-through and is capable of an avalanche gain higher than 100.
Keywords :
III-V semiconductors; aluminium compounds; avalanche photodiodes; indium compounds; photodetectors; semiconductor junctions; wide band gap semiconductors; Al0.52In0.48P; SAM-APD; blue-green detector; breakdown voltage; dark current density; homo-junction separate absorption multiplication avalanche photodiode; narrow spectral response; optical spectrum; temperature 293 K to 298 K; wide band-gap; Absorption; Avalanche photodiodes; Detectors; Educational institutions; Electric fields; Gallium arsenide; Physics; Avalanche photodiode; blue detector; narrow band detector; optical communication;
fLanguage :
English
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
1077-260X
Type :
jour
DOI :
10.1109/JSTQE.2014.2316601
Filename :
6797918
Link To Document :
