DocumentCode
772251
Title
600 mu m/min laser-induced nonthermal etching of GaAs in an HF solution
Author
Willner, A.E. ; Podlesnik, D.V. ; Osgood, R.M.
Author_Institution
AT&T Bell Lab., Crawford Hill Lab., Holmdel, NJ, USA
Volume
26
Issue
9
fYear
1990
fDate
4/26/1990 12:00:00 AM
Firstpage
568
Lastpage
569
Abstract
600 mu m/min room-temperature photochemical aqueous etching of n-type GaAs in an HF acid based solution is reported. This rapid etch rate is achieved under UV illumination and represents more than an order of magnitude enhancement over previously reported results for solutions containing no Hf acid. The process is used to fabricated deep large-area structures such as trench formations and through-wafer via holes which would otherwise be impractical with slower direct-write techniques.
Keywords
III-V semiconductors; etching; gallium arsenide; laser beam applications; semiconductor technology; 10 micron/s; GaAs; HF acid based solution; Hf; UV illumination; deep large area structures; laser-induced nonthermal etching; n-type semiconductor; rapid etch rate; room-temperature; through-wafer via holes; trench formations;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19900371
Filename
48757
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