Hierarchical 2-D DD and HD noise simulations of Si and SiGe devices II. Results

Author

Jungemann, Christoph ; Neinhüs, Burkhard ; Decker, S. ; Meinerzhagen, Bernd

Author_Institution

Bremen Univ., Germany

Volume

49

Issue

7

fYear

2002

fDate

7/1/2002 12:00:00 AM

Firstpage

1258

Lastpage

1264

Abstract

For pt. I see ibid., vol. 49, pp. 1250-1257 (2002). Terminal current noise is investigated with Langevin-type drift-diffusion (DD) and hydrodynamic (HD) noise models for one-dimensional (1-D) N⁺ NN⁺ and P⁺ PP⁺ structures and a realistic two-dimensional (2-D) SiGe NPN HBT. The new noise models, which are suitable for technology computer aided design (TCAD), are validated by comparison with Monte Carlo (MC) device simulations for the 1-D structures including noise due to particle scattering and generation of secondary particles by impact ionization (II). It is shown that the accuracy of the usual approach based on the DD model in conjunction with the Einstein relation degrades under nonequilibrium conditions. 2-D MC noise simulations are found to be feasible only if the current correlation functions decay on a subpicosecond scale, what is not always the case

Keywords

Boltzmann equation; Ge-Si alloys; Monte Carlo methods; Poisson equation; current fluctuations; elemental semiconductors; heterojunction bipolar transistors; impact ionisation; semiconductor device models; semiconductor device noise; shot noise; silicon; technology CAD (electronics); thermal noise; 1-D structures; 2-D Langevin-type models; Einstein relation; Langevin-Boltzmann equation; Monte Carlo simulations; Si; SiGe; current correlation functions; drift-diffusion noise models; fluctuation-dissipation theorem; hierarchical simulations; hydrodynamic noise models; impact ionization; momentum-based simulations; nonequilibrium conditions; particle scattering; quasi-ballistic transport conditions; secondary particles generation; small-signal conductance; technology computer aided design; two-dimensional HBT; Computational modeling; Germanium silicon alloys; Heterojunction bipolar transistors; High definition video; Hydrodynamics; Monte Carlo methods; Neural networks; Noise generators; Silicon germanium; Two dimensional displays;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2002.1013284

Filename

1013284