Title :
Electron-electron interaction signature peak in the substrate current versus gate voltage characteristics of n-channel silicon MOSFETs
Author :
Anil, K.G. ; Mahapatra, S. ; Eisele, I.
Author_Institution :
Inst. of Phys., Univ. der Bundeswehr, Munich, Germany
fDate :
7/1/2002 12:00:00 AM
Abstract :
Impact ionization at low drain voltages in n-MOSFETs was investigated employing devices with three different channel-doping profiles. We report an anomalous peak in substrate current (ISUB ) versus gate voltage (VG) characteristics. It is shown that the anomalous peak can not be directly related to any high field region in the device. The measured data is interpreted based on the general nature of electron energy distribution published by Monte-Carlo simulation groups. Strong evidence is provided which suggest that the anomalous peak in ISUB versus VC, is due to electron-electron interactions
Keywords :
MOSFET; Monte Carlo methods; electron-phonon interactions; elemental semiconductors; hot carriers; impact ionisation; semiconductor device breakdown; semiconductor device models; silicon; Monte-Carlo simulation; Si; anomalous peak; channel-doping profiles; electron energy distribution; electron-electron interaction signature peak; electron-phonon interactions; hot-carrier; impact ionization; low drain voltages; n-channel MOSFET; substrate current-gate voltage characteristics; thermal tail; Charge carrier processes; Electrons; Energy measurement; Impact ionization; Low voltage; MOSFET circuits; Physics; Quantization; Silicon; Tail;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2002.1013287
